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| savantic semiconductor product specification silicon npn power transistors 2SC4429 d escription with to-3pml package high breakdown voltage, high reliability . fast switching speed. wide area of safe operation applications switching regulator applications pinning pin description 1 base 2 collector 3 emitter aabsolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1100 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a i cm collector current-peak 25 a i b base current 4 a t c =25 60 p c collector power dissipation 3 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4429 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 1100 v v (br)ceo collector-emitter breakdown voltage i c =5ma; r be = = 800 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 7 v v cesat collector-emitter saturation voltage i c =4a;i b =0.8a 2.0 v v besat base-emitter saturation voltage i c =4a;i b =0.8a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =0.6a ; v ce =5v 10 40 h fe-2 dc current gain i c =3a ; v ce =5v 8 f t transition frequency i c =0.6a ; v ce =10v 15 mhz c ob output capacitance v cb =10v;f=1mhz 155 pf switching times t on turn-on time 0.5 s t stg storage time 3.0 s t f fall time i c =6a;r l =66.7 b i b1 =1.2a;- i b2 =2.4a v cc =400v 0.3 s h fe-1 classifications k l m 10-20 15-30 20-40 savantic semiconductor product specification 3 silicon npn power transistors 2SC4429 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2SC4429 |
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